Reliability Qualification Challenges of a pHEMT-HBT Hybrid Process

Approach: Wafers and Products The BiHEMT process architecture is a hybrid GaAs/InGaP HBT process co-integrated with an optically-defined 0.7 um gate, InGaP etch-stop, pseudomorphic high electron mobility (pHEMT) process. Both enhancement-mode and depletionmode pHEMT transistors are available. This process offers both power amplifier and RF switch capability, as well as low-noise performance to facilitate multipurpose circuits. The process features 2 levels of thick global interconnects, 1 level of local interconnect, and is encapsulated in high performance, low-K dielectric constant interlayer enabling tremendous wiring flexibility and packaging simplicity. Precision nichrome resistor, metalinsulator-metal capacitors, p-n diodes for ESD protection and Schottky overlap diodes are also included. [1]